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K12A60W

componentes Descripción

MOSFETs Silicon N-Channel MOS (DTMOS)

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10 Pages

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236.1 kB

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Features
(1) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)

APPLICATIONs
• Switching Voltage Regulators

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