JZDW3516 Hoja de datos - JIEJIE MICROELECTRONICS CO.,Ltd
Fabricante

JIEJIE MICROELECTRONICS CO.,Ltd
Chip Features
(1) SIPOS and GPP double-layer passivation protection process
(2) Single mesa outer trench process
(3) VRRM≥ 1600V
(4) Front metal layer: AL or Ti-Ni-Ag
(5) Backside metal layer: Ti-Ni-Ag
The main purpose
(1) Rectified power supply
(2) Other rectification applications
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Fabricante
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd
High Voltage Rectifier Diode Chip
JIEJIE MICROELECTRONICS CO.,Ltd