HOME >>> Renesas Electronics >>>
J506 PDF
J506 Hoja de datos - Renesas Electronics
Fabricante
Renesas Electronics
* Low on-resistance
RDS(on)= 0.065 Ωtyp. (at V
GS = –10V, ID= –5A)
* Low drive current
* High speed switching
* 4V gate drive devices.
Page Link's:
1
2
3
4
5
6
7
8
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon P-Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
