High-Speed IGBT
for 20-50 kHz Switching

FEATUREs
• Silicon Chip on Direct-Copper Bond
   (DCB) Substrate
• Isolated Mounting Surface
• 2500V~ Electrical Isolation
• Optimized for Low Switching Losses
• Square RBSOA
• Positive Thermal Coefficient of
   Vce(sat)
• Anti-Parallel Ultra Fast Diode
• High Current Handling Capability
• International Standard Package

Advantages
• High Power Density
• Low Gate Drive Requirement

APPLICATIONs
• High Frequency Power Inverters
• UPS
• Motor Drives
• SMPS
• PFC Circuits
• Battery Chargers
• Welding Machines
• Lamp Ballasts