IXTA3N120(2004) Hoja de datos - IXYS CORPORATION
Fabricante

IXYS CORPORATION
High Voltage Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
FEATUREs
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
Número de pieza
componentes Descripción
Ver
Fabricante
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage Power MOSFETs
IXYS CORPORATION
High Voltage MOSFETs
IXYS CORPORATION
TOSHIBA POWER MOSFET TRANSISTOR / High Voltage MOSFETs
Toshiba
High Voltage Power MOSFETs w/ Extended FBSOA
IXYS CORPORATION
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc