IXFV18N60P Hoja de datos - IXYS CORPORATION
Número de pieza
IXFV18N60P
Fabricante

IXYS CORPORATION
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
FEATUREs
• International standard packages
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
Advantages
• Easy to mount
• Space savings
• High power density
Número de pieza
componentes Descripción
Ver
Fabricante
HiPerFET Power MOSFET
IXYS CORPORATION
HiPerFET Power MOSFET
IXYS CORPORATION
HiPerFET Power MOSFET
IXYS CORPORATION
HiPerFET Power MOSFET
IXYS CORPORATION
HiPerFET Power MOSFET
IXYS CORPORATION
HiPerFET Power MOSFET ( Rev : 1999 )
IXYS CORPORATION
POLARHV HIPERFET POWER MOSFET ( Rev : 2008 )
Unisonic Technologies
HiPerFET™ Power MOSFET ( Rev : 2004 )
IXYS CORPORATION
HiPerFET™ Power MOSFET
IXYS CORPORATION
HiPerFET™ Power MOSFET
IXYS CORPORATION