Número de pieza
IXFV110N10P
componentes Descripción
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5 Pages
File Size
304 kB
Fabricante
IXYS CORPORATION
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IXFV110N10P Hoja de datos - IXYS CORPORATION
IXYS CORPORATION
PolarHT™ HiPerFET Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
FEATUREs
• Fast intrinsic diode
• International standard packages
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
Advantages
• Easy to mount
• Space savings
• High power density
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