HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside)

Single MOSFET Die

FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
    - High power dissipation
    - Isolated mounting surface
    - 2500V electrical isolation
• Low drain to tab capacitance(<35pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier

APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC and DC motor and servo controls
• Amplifiers

Advantages
• Easy assembly
• Space savings
• High power density
• Low collector capacitance to ground (low EMI)