Número de pieza
IXFN20N120
componentes Descripción
Other PDF
no available.
PDF
page
4 Pages
File Size
559.7 kB
Fabricante

IXYS CORPORATION
HiPerFET Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
FEATUREs
• International standard package
• miniBLOC, with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier
APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density