Número de pieza
IXFK102N30P
componentes Descripción
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2 Pages
File Size
125.5 kB
Fabricante
IXYS CORPORATION
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IXFK102N30P Hoja de datos - IXYS CORPORATION
IXYS CORPORATION
PolarHT™ HiPerFET Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
FEATUREs
• International standard package
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
Advantages
• Easy to mount
• Space savings
• High power density
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