IXBH9N140G Hoja de datos - IXYS CORPORATION
Número de pieza
IXBH9N140G
Fabricante

IXYS CORPORATION
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
N-Channel, Enhancement Mode MOSFET compatible
FEATUREs
• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons and series connected MOSFETs
- lower effective RDS(on)
• MOS Gate turn-on
- drive simplicity
- MOSFET compatible for 10V turn on gate voltage
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• International standard package JEDEC TO-247 AD
• Reverse conducting capability
APPLICATIONs
• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• CRT deflection
• Lamp ballasts
Advantages
• Easy to mount with 1 screw (isolated mounting screw hole)
• Space savings
• High power density
Número de pieza
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