Features
• Ultra Low On-Resistance
- rDS(ON) = 0.016Ω, VGS = −10V
- rDS(ON) = 0.023Ω, VGS = −4.5V
- rDS(ON) = 0.026Ω, VGS = −4V
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Switching Time vs RGS Curves
Número de pieza
componentes Descripción
Ver
Fabricante
9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
Intersil
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Intersil
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Fairchild Semiconductor
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Fairchild Semiconductor
20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Intersil
10A, 30V, 0.012 Ohm, N-Channel, Logic Level, Power MOSFET
Intersil
10A, 30V, 0.200Ω, Logic Level P-Channel Power MOSFET
Harris Semiconductor
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Intersil
56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
Fairchild Semiconductor
10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET
Fairchild Semiconductor