IS61VF25636A Hoja de datos - Integrated Silicon Solution
Número de pieza
IS61VF25636A
Fabricante

Integrated Silicon Solution
DESCRIPTION
The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%
VF: Vdd 2.5V + 5%, Vddq 2.5V + 5%
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages
• Lead-free available
• Automotive temperature available
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Número de pieza
componentes Descripción
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Fabricante
64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
Integrated Silicon Solution
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM ( Rev : 2004 )
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128K x 36 Synchronous Flow-Through 3.3V Cache RAM ( Rev : 2000 )
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Cypress Semiconductor
18-Mbit (512 K × 36/1 M × 18) Flow-Through SRAM ( Rev : 2013 )
Cypress Semiconductor
18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM ( Rev : 2011 )
Cypress Semiconductor
128K x 36 Synchronous Flow-Through 3.3V Cache RAM
Cypress Semiconductor
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
Unspecified
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM ( Rev : 2002 )
Integrated Silicon Solution
36-Mbit (1 M × 36) Flow-Through SRAM ( Rev : 2013 )
Cypress Semiconductor