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IS61SP25618-5B Hoja de datos - Integrated Silicon Solution

IS61SP25616 image

Número de pieza
IS61SP25618-5B

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page
15 Pages

File Size
112.8 kB

Fabricante
ISSI
Integrated Silicon Solution 

DESCRIPTION
The ISSI IS61SP25616 and IS61SP25618 is a high-speed synchronous static RAM designed to provide a burstable, high-performance memory for high speed networking and communication applications. It is organized as 262,144 words by 16 bits and 18 bits, fabricated with ISSIs advanced CMOS technology. The device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.


FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Pentium™ or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and 119-pin PBGA package
• Single +3.3V, +10%, -5% power supply
• Power-down snooze mode

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Número de pieza
componentes Descripción
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Fabricante
256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
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256K x 16 Static RAM
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256K x 16 Static RAM
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256K x 16 Static RAM ( Rev : 2002 )
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Cypress Semiconductor
256K x 16 Static RAM
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256K x 16 Static RAM
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