
Integrated Silicon Solution
DESCRIPTION:
IS43R32800B is a 4-bank x 2,097,152-word x32bit Double Data Rate Synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The IS43R32800B achieves very high speed clock rate up to 200 MHz. It is packaged in 144-ball FBGA.
FEATURES
• Vdd/Vddq=2.5V+0.2V (-5, -6, -75)
• Double data rate architecture; two data transfers
per clock cycle
• Bidirectional, data strobe (DQS) is transmitted/
received with data
• Differential clock input (CLK and /CLK)
• DLL aligns DQ and DQS transitions with CLK
transitions edges of DQS
• Commands entered on each positive CLK edge;
• Data and data mask referenced to both edges of
DQS
• 4 bank operation controlled by BA0, BA1 (Bank
Address)
• /CAS latency –2.0/2.5/3.0 (programmable)
• Burst length - 2/4/8 (programmable)
• Burst type - Sequential/ Interleave (programmable)
• Auto precharge / All bank precharge controlled
by A8
• 4096 refresh cycles/ 64ms (4 banks concurrent
refresh)
• Auto refresh and Self refresh
• Row address A0-11/ Column address A0-7, A9-
SSTL_2 Interface
• Package 144-ball FBGA
• Available in Industrial Temperature
• Temperature Range:
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)