Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package

Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
   Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation