VCES = 600V
IC = 48A, TC = 100°C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.65V

FEATUREs
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
• Lead Free Package

Benefits
• Device optimized for induction heating and soft switching applications
• High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI