IRG4IBC10UD Hoja de datos - International Rectifier
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IRG4IBC10UD
Fabricante

International Rectifier
UltraFast Co-Pack IGBT
FEATUREs
• UltraFast: Optimized for high operating up to
80 kHz in hard switching, > 200 kHz in
resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED® ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-220 Full-Pak
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED® diodes optimized for performance with IGBTs
Minimized recovery characteristics require less/no snubbing
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Fabricante
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier