IRFU220N Hoja de datos - ETC
Fabricante
ETC
[VBsemi]
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
Número de pieza
componentes Descripción
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Fabricante
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 200 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
