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IRFR9220 Hoja de datos - International Rectifier

IRFR9220 image

Número de pieza
IRFR9220

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page
6 Pages

File Size
168.3 kB

Fabricante
IR
International Rectifier 

DESCRIPTION
The HEXFE technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.


FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220)
• Straight Lead (IRFUFU9220)
• Available in Tape & Reel
• P-Channel
• Fast Switching

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
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Fabricante
HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 1.5 Ω, ID = 2.6A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.18 Ohm, ID = 20A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
PDF
International Rectifier
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=3.6A)
PDF
Vishay Semiconductors
HEXFET Power MOSFET. VDSS = -200V, RDS(on) = 3.0 Ω, ID = -1.9A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
PDF
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
PDF
International Rectifier

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