IRFP254(V2) Hoja de datos - IXYS CORPORATION
Fabricante

IXYS CORPORATION
Standard Power MOSFET
N-Channel Enhancement Mode
FEATUREs
• International standard package
JEDEC TO-247 AD
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
APPLICATIONs
• Switch-mode and resonant-mode
power supplies
• Motor controld
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
Número de pieza
componentes Descripción
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Fabricante
High ruggedness / N-Channel MOSFET
Unspecified
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
Semelab - > TT Electronics plc
N-Channel Enhancement-Mode MOSFET Die
General Semiconductor
N-Channel MOSFET Die Enhancement-Mode
Central Semiconductor
High Voltage Power MOSFET Die
IXYS CORPORATION
High Voltage Power MOSFET Die
IXYS CORPORATION
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Semelab - > TT Electronics plc