IRFIZ34G Hoja de datos - International Rectifier
Fabricante

International Rectifier
DESCRIPTION
Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsinkusing a single clip or by a single screw fixing.
• Isolated Package
• High Voltage Isolation=2.5KVRMS
• Sink to Lead Creepage Dist.=4.8mm
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
Número de pieza
componentes Descripción
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Fabricante
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
International Rectifier
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
International Rectifier
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
Vishay Semiconductors
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
International Rectifier
HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A
International Rectifier
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
International Rectifier
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
International Rectifier
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A)
International Rectifier