IRFIB6N60A Hoja de datos - International Rectifier
Número de pieza
IRFIB6N60A
Fabricante

International Rectifier
Applications
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
High Voltage Isolation = 2.5KVRMS
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current
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Número de pieza
componentes Descripción
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Fabricante
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
International Rectifier
HEXFET power MOSFET. VDSS = 400V, RDS(on) = 0.55 Ohm, ID = 5.7 A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
International Rectifier
HEXFET power MOSFET. VDSS = -200V, RDS(on) = 0.80 Ohm, ID = -4.3 A
International Rectifier
HEXFET power MOSFET. VDSS = 450V, RDS(on) = 0.63 Ohm, ID = 4.9 A
International Rectifier
HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
International Rectifier
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
International Rectifier
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 57A
International Rectifier