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IRFI740G(2016) Hoja de datos - Vishay Semiconductors

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Número de pieza
IRFI740G

componentes Descripción

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page
8 Pages

File Size
833.2 kB

Fabricante
Vishay
Vishay Semiconductors 

DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.


FEATURES
• Isolated package
• High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to lead creepage distance = 4.8 mm
• Dynamic dV/dt rating
• Low thermal resistance
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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