IRFF120 Hoja de datos - GE Solid State
Fabricante
GE Solid State
5.0A and 6.0A, 60V-100V rDS(0n) = 0.30Ω and 0.40Ω
FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device
Número de pieza
componentes Descripción
Ver
Fabricante
N-Channel Enhancement Mode Power Field Effect Transistor
Transys Electronics
N-Channel Enhancement Mode Power Field Effect Transistor
New Jersey Semiconductor
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
NXP Semiconductors.
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
