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IRFD9110(2008) Hoja de datos - Vishay Semiconductors

IRFD9110PBF image

Número de pieza
IRFD9110

componentes Descripción

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page
8 Pages

File Size
1.5 MB

Fabricante
Vishay
Vishay Semiconductors 

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.


FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• For Automatic Insertion
• End Stackable
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available

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