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IRF820 Hoja de datos - International Rectifier

IRF820 image

Número de pieza
IRF820

componentes Descripción
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

Other PDF
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PDF
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page
6 Pages

File Size
169 kB

Fabricante
IR
International Rectifier 

DESCRIPTION
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

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Número de pieza
componentes Descripción
Ver
Fabricante
IRF820S
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)
PDF
International Rectifier
IFRI820G
Power MOSFET (Vdss=500V, Rds(on)=3.0ohm, Id=2.1A)
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International Rectifier
FB11N50A
Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
PDF
Vishay Semiconductors
IRFB18N50K
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
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Kersemi Electronic Co., Ltd.
IRFB18N50K
Power MOSFET(Vdss=500V/ Rds(on)max=0.26ohm/ Id=27A)
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Vishay Semiconductors
IRFBA22N50
SMPS MOSFET(Vdss=500V/ Rds(on)max=0.23ohm/ Id=24A)
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International Rectifier
IRFB13N50A
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
PDF
International Rectifier
FB18N50K
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
PDF
International Rectifier
IRFP32N50KPBF
HEXFET Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
PDF
International Rectifier
IRFI820
HEXFET power MOSFET. VDSS = 500V, RDS(on) = 3.0 Ohm, ID = 2.1 A
PDF
International Rectifier

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