IKP08N65F5 Hoja de datos - Infineon Technologies
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IKP08N65F5
Fabricante

Infineon Technologies
Features and Benefits:
High speed F5 technology offering
• Best-in-Class efficiency in hard switching and resonant
topologies
• 650V breakdown voltage
• Low QG
• IGBT copacked with RAPID 1 fast and soft antiparallel diode
• maximum junction temperature 175°C
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
//www.infineon.com/igbt/
APPLICATIONs:
• Solar converters
• Uninterruptible power supplies
• Welding converters
• Mid to high range switching frequency converters
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650V DuoPack IGBT and diode High speed switching series fifth generation
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation ( Rev : 2012 )
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation ( Rev : 2012 )
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation ( Rev : 2012 )
Infineon Technologies
650V DuoPack IGBT and Diode High speed switching series fifth generation ( Rev : 2012 )
Infineon Technologies