• DESCRITION
• reliable device for use in a wide variety of applications

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤8.0mΩ
• Enhancement mode:
   Vth =1.0 to 2.2V (VDS = 0 V, ID=250μ A)
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation