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IDW20S120 Hoja de datos - Infineon Technologies

IDW20S120 image

Número de pieza
IDW20S120

componentes Descripción

Other PDF
  no available.

PDF
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page
11 Pages

File Size
725.2 kB

Fabricante
Infineon
Infineon Technologies 

Description
The 1200V family of Infineon SiC Schottky diodes has emerged over the years as the industry standard and is now being extended with the IDWxxS120 product family in the TO247 package.
The very good thermal characteristics of the TO247 in combination with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With the introduction of this package, Infineon now offers a current capability of up to 30A in the 1200V range.


FEATUREs
• Revolutionary semiconductor material - Silicon Carbide
• Benchmark switching behavior
• No reverse recovery/ No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Optimized for high temperature operation


Benefits
• System efficiency improvement over Si diodes
• System cost / size savings due to reduced cooling requirements
• Enabling higher frequency / increased power density solutions
• Higher system reliability due to lower operating temperatures
• Reduced EMI


APPLICATIONs
• SMPS; CCM PFC
• Solar applications; UPS; Motor Drives


Número de pieza
componentes Descripción
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Fabricante
1200V SiC Schottky Diode
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