The HYM 321005S/GS-50/-60 is a 4 MByte EDO- DRAM module organized as 1 048 576 words by 32-bit in a 72-pin single-in-line package comprising two HYB 5118165BSJ 1M × 16 EDO-DRAMs in 400 mil wide SOJ-packages mounted together with two 0.2 µF ceramic decoupling capacitors on a PC board.

Advanced Information
• SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications
• Fast access and cycle time
    50 ns access time
    84 ns cycle time (-50 version)
    60 ns access time
    104 ns cycle time (-60 version)
• Hyper page mode- EDO capability with
    20 ns cycle time (-50 version)
    25 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
    max 2200 mW active (-50 version)
    max. 1980 mW active (-60 version)
    CMOS – 11 mW standby
    TTL – 22 mW standby
• CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh
• 2 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin Single in-Line Memory Module
• Utilizes two 1M × 16 -DRAMs in SOJ-42 packages
• 1024 refresh cycles / 16 ms
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pad HYM 321005S
• Gold-Lead contact pad HYM 321005GS
• single sided module with 20.32 mm (800 mil) height