SUMMARY DESCRIPTION
The HY27UV08BG(5/D/F)M is a 4096Mx8bit with spare 128Mx8 bit capacity. The device is offered in 3.3V Vcc Core Power Supply, 3.3V Input-Output Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device contains 16384 blocks, composed by 128 pages consisting in two NAND structures of 32 series connected Flash cells. Every cell holds two bits. Even pages are stored in the LSB of the cells and odd pages are stored in the MSB of the cells Memory array is split into 2 planes, each of them consisting of 8196 blocks. Like all other 2KB . page NAND Flash devices, a program operation allows to write the 2112-byte page in typical 800us and an erase operation can be performed in typical 2.5ms on a 256K-byte block. In addition to this, thanks to multiplane architecture, it is possible to program 2 pages a time (one per each plane) or to erase 2 blocks a time (again, one per each plane).