Número de pieza
HVV1214-025S
componentes Descripción
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PDF
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2 Pages
File Size
222.2 kB
Fabricante
HVVi Semiconductors, Inc.
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HVV1214-025S Hoja de datos - HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc.
DESCRIPTION
The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz.
FEATURES
• High Power Gain
• Excellent Ruggedness
• 48V Supply Voltage
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componentes Descripción
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Fabricante
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