Description
These dual beam lead diodes are constructed using a metal-semiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Avago beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.

FEATUREs
• Monolithic Pair: Closely Matched Electrical Parameters
• Low Capacitance: 0.1 pF Maximum at 0 Volts
• Low Noise Figure: Typical 7.5 dB at 26 GHz
• Rugged Construction: 4 Grams Minimum Lead Pull
• Platinum Tri-Metal System: High Temperature Stability
• Polyimide Scratch Protection
• Silicon Nitride Passivation: Stable, Reliable Performance