Description
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift.
The Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance.

FEATUREs
• Platinum Tri-Metal System
   High Temperature Stability
• Silicon Nitride Passivation
   Stable, Reliable Performance
• Low Noise Figure
   Guaranteed 7.5 dB at 26 GHz
• High Uniformity
   Tightly Controlled Process
   Insures Uniform RF
   Characteristics
• Rugged Construction
   4 Grams Minimum Lead Pull
• Low Capacitance
   0.10 pF Max. at 0 V
• Polyimide Scratch Protection