General Description
The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifi er which operates between 3 and 4 GHz. The amplifi er is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a single +5V supply. Power down capability is available to conserve current consumption when the amplifi er is not in use.

FEATUREs
   High Gain: 21 dB
   Saturated Power: +30 dBm @ 45% PAE
   Output P1dB: +27 dBm
   Single Supply: +5V
   Power Down Capability
   Low External Part Count
   Compact MSOP Package: 14.8 mm2

Typical Applications
The HMC327MS8G(E) is ideal for:
• Wireless Local Loop
• WiMAX & Fixed Wireless
• Access Points
• Subscriber Equipment