75A, 600V, UFS Series N-Channel IGBT

The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25^oC and 150^oC.

FEATUREs
• 75A, 600V, TC= 25^oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ= 150^oC
• Short Circuit Rating
• Low Conduction Loss