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HAF2007L Hoja de datos - Renesas Electronics

HAF2007 image

Número de pieza
HAF2007L

Other PDF
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page
9 Pages

File Size
90.1 kB

Fabricante
Renesas
Renesas Electronics 

Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.


FEATUREs
•  Logic level operation (4 to 6 V Gate drive)
•  High endurance capability against to the short circuit
•  Built-in the over temperature shut-down circuit
•  Latch type shut-down operation (Need 0 voltage recovery)

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Fabricante
Silicon N Channel MOS FET Series Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
PDF
Hitachi -> Renesas Electronics

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