H7N1002LM Hoja de datos - Renesas Electronics
Fabricante
Renesas Electronics
Features
• Low on-resistance
RDS (on) = 8 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Número de pieza
componentes Descripción
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Fabricante
Silicon N-Channel MOS FET High Speed Power Switching
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Silicon N-Channel MOS FET High Speed Power Switching
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Renesas Electronics
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Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
