Número de pieza
H5N5004PL
componentes Descripción
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Fabricante
Renesas Electronics
H5N5004PL Hoja de datos - Renesas Electronics
Renesas Electronics
Features
• Low on-resistance: RDS(on)= 0.09 Ωtyp.
• Low leakage current: IDSS = 10 µA max (at VDS = 500 V)
• High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A)
• Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A)
• Avalanche ratings
• Built-in fast recovery diode: trr = 190 ns typ
Número de pieza
componentes Descripción
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Fabricante
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
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