Número de pieza
H12N65P
componentes Descripción
Other PDF
no available.
PDF
page
7 Pages
File Size
469.6 kB
Fabricante

HAOHAI ELECTRONICS CO., LTD.
Features
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 38nC(Typ.)
Extended Safe Operating Area
Lower RDS(ON): 0.67Ω(Typ.) @ VGS=10V
100% Avalanche Tested
Package: TO-220AB & TO-220F