The H11A1 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

• Current Transfer Ratios (CTR) 30% and 50%
• Economical Optoisolators for General Purpose/High Volume Applications
• To order devices that are tested and marked per VDE 0884 requirements, the
   suffix ”V” must be included at end of part number. VDE 0884 is a test option.

APPLICATIONs
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• Monitor and Detection Circuits