GT15M321(2002) Hoja de datos - Toshiba
Fabricante
Toshiba
HIGH POWER SWITCHING APPLICATIONS
• The 4th Generation
• FRD Included Between Emitter and Collector
• Enhancement−Mode
• High Speed : tf = 0.20 µs (TYP.) (IC = 15 A)
• Low Saturation Voltage : VCE (sat) = 1.8V (TYP.)
(IC = 15A)
Número de pieza
componentes Descripción
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Fabricante
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : 2002 )
Toshiba
