Número de pieza
GT15J321
componentes Descripción
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Toshiba
GT15J321 Hoja de datos - Toshiba
Toshiba
High Power Switching Applications
Fast Switching Applications
• Fourth-generation IGBT
• Fast switching (FS
• Enhancement mode type
• High speed: tf = 0.03 μs (typ.)
• Low saturation Voltage: VCE (sat) = 1.90 V (typ.)
• FRD included between emitter and collector
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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
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