GS880F18BGT-5.5IV Hoja de datos - Giga Semiconductor
Número de pieza
GS880F18BGT-5.5IV
Fabricante

Giga Semiconductor
Functional Description
Applications
The GS880F18/32/36BT-xxxV is a 9,437,184-bit (8,388,608- bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.
FEATUREs
• Flow Through operation; Pin 14 = No Connect
• 1.8 V or 2.5 V +10%/–10% core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available
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Fabricante
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs ( Rev : 2002 )
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor