GS832018GT-133IV Hoja de datos - Giga Semiconductor
Número de pieza
GS832018GT-133IV
Fabricante

Giga Semiconductor
Features
• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• RoHS-compliant 100-lead TQFP package available
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Número de pieza
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Fabricante
2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs
Giga Semiconductor
2M x 18, 1M x 36, 512K x 72 36Mb Sync NBT SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor