Description :
The GLT4160L16 is a 1,048,576 x 16 bit high-performance CMOS dynamic random access memory. The GLT4160L16 offers Fast Page mode with Extended Data Output, and has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. The GLT4160L16 has symmetric address and accepts 1024-cycle refresh in 16ms interval.
All inputs are TTL compatible. EDO Page Mode operation allows random access up to 1024 x 16 bits within a page, with cycle times as short as 13ns.
The GLT4160L16 is best suited for graphics, and DSP applications requiring high performance memories.

FEATUREs :
* 1,048,576 words by 16 bits organization.
* Fast access time and cycle time.
* Dual CAS Input.
* Low power dissipation.
* Read-Modify-Write, RAS-Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh and Test Mode Capability.
* 1024 refresh cycles per 16ms.
* Available in 400 mil SOJ / TSOPII Packages.
* Single 3.3V±0.3V Power Supply.
* All inputs and Outputs are TTL compatible.
* Extended Data-Out(EDO) Page Mode operation.
* Self – refresh capability. (S-Version).