Description
This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of Automotive Applications.

FEATUREs
• BVCEO > -60V
• IC = -1A High Continuous Collector Current
• ICM = -2A Peak Pulse Current
• RSAT = 295mΩ for a Low Equivalent On-Resistance
• hFE Characterized up to -2A for High Current Gain Hold Up
• Complementary NPN Type: FMMT491Q
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)