200mA Silicon NPN Epitaxial Planar Transistor

FEATUREs
• High collector-emitterbreakdien voltage. (BVCEO = 40V@IC=1mA)
• Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3904W-H.