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FGA25N120ANTD Hoja de datos - Fairchild Semiconductor

25N120 image

Número de pieza
FGA25N120ANTD

componentes Descripción

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page
9 Pages

File Size
638.6 kB

Fabricante
Fairchild
Fairchild Semiconductor 

Description
Using Fairchild®s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven.


FEATUREs
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V 
   @ IC = 25 A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.96 mJ 
   @ IC = 25 A and TC = 25°C
• Extremely Enhanced Avalanche Capability


APPLICATIONs
• Induction Heating, Microwave Oven

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